{"id":2233,"date":"2024-02-08T00:00:00","date_gmt":"2024-02-08T00:00:00","guid":{"rendered":"https:\/\/ontoinnovation.com\/resources\/using-ocd-to-measure-trench-structures-in-sic-power-devices\/"},"modified":"2025-09-12T18:59:10","modified_gmt":"2025-09-12T18:59:10","slug":"using-ocd-to-measure-trench-structures-in-sic-power-devices","status":"publish","type":"resources","link":"https:\/\/ontoinnovation.com\/resources\/using-ocd-to-measure-trench-structures-in-sic-power-devices\/","title":{"rendered":"Using OCD To Measure Trench Structures in SiC Power Devices"},"content":{"rendered":"\n\n \n\n\n\n
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You don\u2019t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we won\u2019t be getting there without compound semiconductors like SiC.<\/p>\n

Manufacturers in the automobile and clean energy sectors want more efficient power devices that can accommodate higher voltages, possess faster switching speeds and offer lower losses than traditional silicon-based power devices, something SiC power devices with trench structures can deliver.<\/p>\n

But while trench-based architectures offer reduced on-resistance and increase carrier mobility, they bring along increased complexity. For manufacturers of SiC power devices, the ability to accurately measure epi layer growth and the depth of implant layers in these trenches is of considerable concern, especially when faced with ever-increasing fabrication complexity.<\/p>\n

In the previous blog in this series, we explored how using an FTIR-based system<\/a> allows for the direct modeling of carrier concentrations and film thickness, thus enabling SiC power device makers to better measure epi layer growth, implant layers and composition. In this installment, we explore how manufacturers of SiC power devices with trench-based structures measure trench depth and bottom and top critical dimension (CD) by using an optical critical dimension (OCD) metrology system<\/a>\u00a0designed for specialty devices.<\/p>\n\n <\/div>\n

\n Read More<\/a>\n <\/div>\n <\/div>\n \n <\/div>\n <\/div>\n<\/section>\n\n","protected":false},"excerpt":{"rendered":"","protected":false},"featured_media":2234,"template":"","tech_trend":[175],"resources_types":[238],"resources_topics":[247],"market_segment":[122],"class_list":["post-2233","resources","type-resources","status-publish","has-post-thumbnail","hentry","tech_trend-sustainability","resources_types-blog-post","resources_topics-metrology","market_segment-specialty"],"acf":[],"yoast_head":"\nUsing OCD To Measure Trench Structures in SiC Power Devices - Onto Innovation<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/ontoinnovation.com\/resources\/using-ocd-to-measure-trench-structures-in-sic-power-devices\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Using OCD To Measure Trench Structures in SiC Power Devices - 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